Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films
Identifieur interne : 000E24 ( Main/Repository ); précédent : 000E23; suivant : 000E25Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films
Auteurs : RBID : Pascal:13-0161923Descripteurs français
- Pascal (Inist)
- Recuit, Niveau profond, Niveau énergie profond, Niveau défaut, Dépôt électrolytique, Couche mince, Structure lamellaire, Dispositif couche mince, Dispositif photovoltaïque, Cellule solaire, Densité défaut, Sélénium, Effet rayonnement, DLTS, Chalcopyrite, Cuivre Indium Séléniure Mixte, Cuivre, Gallium, Diode barrière Schottky, Energie activation, Processus diffusion, Lacune, CuInSe2, 8115P, 8460J, 6855L, 6180.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
- Activation energy, Annealing, Chalcopyrite, Copper, Copper Indium Selenides Mixed, DLTS, Deep energy levels, Deep level, Defect density, Defect level, Diffusion process, Electrodeposition, Gallium, Lamellar structure, Photovoltaic cell, Radiation effects, Schottky barrier diodes, Selenium, Solar cells, Thin film devices, Thin films, Vacancies.
Abstract
CuinSe2 (CISe) is a prototype material for the I-III-VI chalcopyrites such as Cu(In,Ga)(S,Se)2 used as absorber layers in thin film photovoltaic cells. Carefully-controlled pulsed-laser annealing (PLA) is a unique annealing process that has been demonstrated to improve the device performance of chalcopyrite solar cells. Here, we investigate the changes in defect populations after PLA of electrochemically-deposited CISe thin films previously furnace annealed in selenium vapor. The films were irradiated in the sub-melting regime at fluences inducing temperatures up to 840 ±100 K. Deep-level transient spectroscopy on Schottky diodes reveals that the activation energy of the dominant majority carrier trap changes non-monotonically from 215 ± 10 meV for the reference sample, to 330 ±10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215 ± 10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe<sub>2</sub> thin films</title><author><name sortKey="Bhatia, A" uniqKey="Bhatia A">A. Bhatia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Science and Engineering, University of Utah</s1><s2>Salt Lake City</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Salt Lake City</wicri:noRegion></affiliation></author><author><name sortKey="Meadows, H" uniqKey="Meadows H">H. Meadows</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire Photovoltaïque, University of Luxembourg</s1><s2>Belvaux</s2><s3>LUX</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Luxembourg (pays)</country><wicri:noRegion>Belvaux</wicri:noRegion></affiliation></author><author><name sortKey="Oo, W M Hlaing" uniqKey="Oo W">W. M. Hlaing Oo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Science and Engineering, University of Utah</s1><s2>Salt Lake City</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Salt Lake City</wicri:noRegion></affiliation></author><author><name sortKey="Dale, P J" uniqKey="Dale P">P. J. Dale</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire Photovoltaïque, University of Luxembourg</s1><s2>Belvaux</s2><s3>LUX</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Luxembourg (pays)</country><wicri:noRegion>Belvaux</wicri:noRegion></affiliation></author><author><name sortKey="Scarpulla, M A" uniqKey="Scarpulla M">M. A. Scarpulla</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Science and Engineering, University of Utah</s1><s2>Salt Lake City</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Salt Lake City</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Electrical and Computer Engineering, University of Utah</s1><s2>Salt Lake City</s2><s3>USA</s3><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Salt Lake City</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0161923</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0161923 INIST</idno><idno type="RBID">Pascal:13-0161923</idno><idno type="wicri:Area/Main/Corpus">000E85</idno><idno type="wicri:Area/Main/Repository">000E24</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Annealing</term><term>Chalcopyrite</term><term>Copper</term><term>Copper Indium Selenides Mixed</term><term>DLTS</term><term>Deep energy levels</term><term>Deep level</term><term>Defect density</term><term>Defect level</term><term>Diffusion process</term><term>Electrodeposition</term><term>Gallium</term><term>Lamellar structure</term><term>Photovoltaic cell</term><term>Radiation effects</term><term>Schottky barrier diodes</term><term>Selenium</term><term>Solar cells</term><term>Thin film devices</term><term>Thin films</term><term>Vacancies</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term><term>Niveau profond</term><term>Niveau énergie profond</term><term>Niveau défaut</term><term>Dépôt électrolytique</term><term>Couche mince</term><term>Structure lamellaire</term><term>Dispositif couche mince</term><term>Dispositif photovoltaïque</term><term>Cellule solaire</term><term>Densité défaut</term><term>Sélénium</term><term>Effet rayonnement</term><term>DLTS</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Cuivre</term><term>Gallium</term><term>Diode barrière Schottky</term><term>Energie activation</term><term>Processus diffusion</term><term>Lacune</term><term>CuInSe2</term><term>8115P</term><term>8460J</term><term>6855L</term><term>6180</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuinSe<sub>2</sub> (CISe) is a prototype material for the I-III-VI chalcopyrites such as Cu(In,Ga)(S,Se)<sub>2</sub> used as absorber layers in thin film photovoltaic cells. Carefully-controlled pulsed-laser annealing (PLA) is a unique annealing process that has been demonstrated to improve the device performance of chalcopyrite solar cells. Here, we investigate the changes in defect populations after PLA of electrochemically-deposited CISe thin films previously furnace annealed in selenium vapor. The films were irradiated in the sub-melting regime at fluences inducing temperatures up to 840 ±100 K. Deep-level transient spectroscopy on Schottky diodes reveals that the activation energy of the dominant majority carrier trap changes non-monotonically from 215 <sub>±</sub> 10 meV for the reference sample, to 330 ±10 meV for samples irradiated at 20 and 30 mJ/cm<sup>2</sup>, and then back to 215 ± 10 meV for samples irradiated at 40 mJ/cm<sup>2</sup>. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>531</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe<sub>2</sub> thin films</s1></fA08><fA11 i1="01" i2="1"><s1>BHATIA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MEADOWS (H.)</s1></fA11><fA11 i1="03" i2="1"><s1>OO (W. M. Hlaing)</s1></fA11><fA11 i1="04" i2="1"><s1>DALE (P. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCARPULLA (M. A.)</s1></fA11><fA14 i1="01"><s1>Materials Science and Engineering, University of Utah</s1><s2>Salt Lake City</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire Photovoltaïque, University of Luxembourg</s1><s2>Belvaux</s2><s3>LUX</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Electrical and Computer Engineering, University of Utah</s1><s2>Salt Lake City</s2><s3>USA</s3><sZ>5 aut.</sZ></fA14><fA20><s1>566-571</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000500618870910</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0161923</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>CuinSe<sub>2</sub> (CISe) is a prototype material for the I-III-VI chalcopyrites such as Cu(In,Ga)(S,Se)<sub>2</sub> used as absorber layers in thin film photovoltaic cells. Carefully-controlled pulsed-laser annealing (PLA) is a unique annealing process that has been demonstrated to improve the device performance of chalcopyrite solar cells. Here, we investigate the changes in defect populations after PLA of electrochemically-deposited CISe thin films previously furnace annealed in selenium vapor. The films were irradiated in the sub-melting regime at fluences inducing temperatures up to 840 ±100 K. Deep-level transient spectroscopy on Schottky diodes reveals that the activation energy of the dominant majority carrier trap changes non-monotonically from 215 <sub>±</sub> 10 meV for the reference sample, to 330 ±10 meV for samples irradiated at 20 and 30 mJ/cm<sup>2</sup>, and then back to 215 ± 10 meV for samples irradiated at 40 mJ/cm<sup>2</sup>. 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